SGS-THOMSON unique 鈥漇ingle Feature Size鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP55NE06
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
V
ISO
dv/dt
T
stg
T
j
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
Uni t
STP55NE06FP
60
60
鹵
20
V
V
V
30
21
220
35
0.27
2000
7
A
A
A
W
W/ C
V
V/ ns
o
o
o
55
39
220
130
0.96
錚?/div>
-65 to 175
175
(
1
) I
SD
鈮?/div>
55 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
C
C
1/9
(鈥? Pulse width limited by safe operating area
January 1998
next
STP55NE06FP相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-220AB
ETC
-
英文版
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 3A I(C) | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | TO-220AB
ETC
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.6A I(D) ...
ETC
-
英文版
N-Channel enhancement mode power mos transistor
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.5A I(D) ...
ETC
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicro
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 53A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 53A I(D) | ...
ETC
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR