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STP50NE10 Datasheet

  • STP50NE10

  • N - CHANNEL 100V - 0.021ohm - 50A TO-220 STripFET POWER MOS...

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STP50NE10
N - CHANNEL 100V - 0.021鈩?- 50A TO-220
STripFET鈩?POWER MOSFET
TYPE
STP50NE10
s
s
s
s
s
V
DSS
100 V
R
DS(on)
<0.027
鈩?/div>
I
D
50 A
TYPICAL R
DS(on)
= 0.021
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
dv/dt (
1
) Peak Diode Recovery voltage slope
T
s tg
T
j
Storage Temperature
Max. Operating Junction Temperature
o
Value
100
100
鹵
20
50
35
200
150
1
6
-65 to 175
175
(
1
) I
SD
鈮?/div>
50 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
April 1999
1/8

STP50NE10 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • STripFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 50A

  • 27 毫歐 @ 25A，10V

  • 4V @ 250µA

  • 166nC @ 10V

  • 6000pF @ 25V

  • 180W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • 497-2644-5

STP50NE10相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-220AB
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-218AA
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-218AA
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 3A I(C) | TO-218AA
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-218AA
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 500V V(BR)CEO | TO-220AB
    ETC
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.6A I(D) ...
    ETC
  • 英文版
    N-Channel enhancement mode power mos transistor
    STMICROELECTRONICS
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.5A I(D) ...
    ETC
  • 英文版
    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMicro
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 53A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 53A I(D) | ...
    ETC
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS

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