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STP50NE10L Datasheet

  • STP50NE10L

  • N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOS...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP50NE10L
N - CHANNEL 100V - 0.020鈩?- 50A TO-220
STripFET鈩?POWER MOSFET
TYPE
STP50NE10L
s
s
s
s
s
V
DSS
100 V
R
DS(on)
<0.025
鈩?/div>
I
D
50 A
TYPICAL R
DS(on)
= 0.020
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
dv/dt (
1
) Peak Diode Recovery voltage slope
T
s tg
T
j
Storage Temperature
Max. Operating Junction Temperature
o
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value
100
100
20
50
35
200
150
1
6
-65 to 175
175
(
1
) I
SD
鈮?/div>
50 A, di/dt
鈮?/div>
275 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
May 1999
1/8

STP50NE10L 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • N-Channel

  • 100 V

  • +/- 20 V

  • 50 A

  • 0.02 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220

  • Tube

  • 45 ns

  • 45 S

  • - 65 C

  • 150 W

  • 105 ns

  • 50

  • 135 ns

STP50NE10L相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-220AB
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-218AA
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-218AA
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 3A I(C) | TO-218AA
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-218AA
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 500V V(BR)CEO | TO-220AB
    ETC
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.6A I(D) ...
    ETC
  • 英文版
    N-Channel enhancement mode power mos transistor
    STMICROELECTRONICS
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.5A I(D) ...
    ETC
  • 英文版
    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMicro
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 53A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 53A I(D) | ...
    ETC
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS

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