鈩?/div>
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D
2
PAK
1
3
2
TO-220
TO-220FP
I PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications.
2
12
3
APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
s
ORDERING INFORMATION
SALES TYPE
STP4NC80Z
STP4NC80ZFP
STB4NC80ZT4
STB4NC80Z-1
MARKING
P4NC80Z
P4NC80ZFP
B4NC80Z
B4NC80Z
PACKAGE
TO-220
TO-220FP
D
2
PAK
I
2
PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TAPE & REEL
November 2003
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