鈩?/div>
I
D
4A
4A
3
1
2
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High speed switching
TO-220
TO-247
Description
Using the well consolidated high voltage MESH
OVERLAY鈩?process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company鈥檚 proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Internal schematic diagram
Applications
鈻?/div>
Switching application
Order codes
Part number
STP4N150
STW4N150
Marking
P4N150
W4N150
Package
TO-220
TO-247
Packaging
Tube
Tube
August 2006
Rev 4
1/14
www.st.com
14
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