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STP45NF06 Datasheet

  • STP45NF06

  • N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET⑩ POWER MOSFE...

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP45NF06
N-CHANNEL 60V - 0.022鈩?- 38A TO-220
STripFET鈩?POWER MOSFET
PRELIMINARY DATA
TYPE
STP45NF06
s
s
V
DSS
60V
R
DS(on)
<0.028鈩?/div>
I
D
38A
TYPICAL R
DS
(on) = 0.022鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique 鈥淪ingle Feature
Size
鈩⑩€?/div>
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
60
60
鹵20
38
26
152
80
0.53
7
鈥?5 to 175
175
(1) I
SD
鈮?8A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(
q
) Pulse width limited by safe operating area
November 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/6

STP45NF06 產(chǎn)品屬性

  • STP45NF06 View All Specifications

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • STripFET™

  • MOSFET N 通道,金屬氧化物

  • 標準型

  • 60V

  • 38A

  • 28 毫歐 @ 19A,10V

  • 4V @ 250µA

  • 58nC @ 10V

  • 980pF @ 25V

  • 80W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • 497-3189-5

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