鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
1
3
2
1
2
3
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size鈩?"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP45NE06
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
V
ISO
dv/dt
T
stg
T
j
June 1998
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
o
Unit
STP45NE06FP
60
60
鹵
20
V
V
V
25
17.5
180
35
0.23
2000
7
A
A
A
W
W/
o
C
V
V/ns
o
o
45
31
180
100
0.67
錚?/div>
-65 to 175
175
C
C
1/6
(鈥? Pulse width limited by safe operating area
(
1
) I
SD
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