Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY(UPS)
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
V
ISO
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
o
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB80
STP3NB80F P
800
800
鹵
30
2.6
1.6
10.4
90
0.72
錚?/div>
錚?/div>
-65 to 150
150
(
1
) I
SD
鈮?/div>
2.6 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMA
Un it
V
V
V
2.6 (
鈥⑩€?/div>
)
1.6 (鈥⑩€?
10.4
35
0.28
4.5
2000
A
A
A
W
W /
o
C
V/ns
V
o
o
C
C
(鈥? Pulse width limited by safe operating area
(
鈥⑩€?
Limited only by maximum temperature allowed
January 1999
1/9
STP3NB80 產(chǎn)品屬性
STMicroelectronics
MOSFET
N-Channel
800 V
+/- 30 V
2.6 A
4.6 Ohms
Single
+ 150 C
Through Hole
TO-220
Tube
17 ns
2 S
- 65 C
90 W
10 ns
50
STP3NB80相關(guān)型號(hào)PDF文件下載
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型號(hào)
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描述
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