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STP3NA90 Datasheet

  • STP3NA90

  • N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

  • 6頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP3NA90
STP3NA90FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
T YPE
ST P3NA90
ST P3NA90FI
s
s
s
s
s
s
s
V
DSS
900 V
900 V
R
DS(o n)
< 5.3
鈩?/div>
<
5.3
鈩?/div>
I
D
3A
1.9 A
TYPICAL R
DS(on)
= 4.4
鈩?/div>
鹵
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
TO-220
1
2
3
1
2
3
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
V
ISO
T
stg
T
j
Parameter
STP3NA90
Drain-Source Voltage (V
gs
= 0)
Drain-Gate Voltage (R
gs
= 20 K鈩?
Gate-Source Voltage
Drain-Current (continuous) at T
c
= 25 C
Drain-Current (continuous) at T
c
= 100 C
Drain-Current (Pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation W ithstand Voltage (DC)
Storage T emperature
Max Operating Junction T emperature
o
o
Value
STP3NA90F I
900
900
鹵
30
3
2
12
100
1.25
-
-65 to 150
150
1.9
1.2
12
40
0.32
2000
Unit
V
V
V
A
A
A
W
W/
o
C
V
o
o
C
C
(鈥?Pulse width limited by safe operating area
March 1996
1/6

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