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STP36NE06FP Datasheet

  • STP36NE06FP

  • N - CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET ...

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP36NE06
STP36NE06FP
N - CHANNEL 60V - 0.032鈩?- 36A - TO-220/TO-220FP
STripFET鈩?POWER MOSFET
TYPE
ST P36NE06
ST P36NE06FP
s
s
s
s
s
V
DSS
60 V
60 V
R
DS(on)
< 0.040
鈩?/div>
< 0.040
鈩?/div>
I
D
36 A
20 A
TYPICAL R
DS(on)
= 0.032
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
1
2
3
1
2
3
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique 鈥漇ingle Feature Size鈩?鈥?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP36NE06
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
V
ISO
dv/dt
T
stg
T
j
July 1998
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
Uni t
STP36NE06FP
60
60
鹵
20
V
V
V
20
14
144
35
0.27
2000
7
A
A
A
W
W/ C
V
V/ ns
o
o
o
36
24
144
100
0.66
錚?/div>
-65 to 175
175
(
1
) I
SD
鈮?/div>
36 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
C
C
1/9
(鈥? Pulse width limited by safe operating area

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