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STP/F30NM60ND-STW30NM60ND

STB30NM60ND-STI30NM60ND

N-channel 600V - 0.11鈩?- 25A TO-220/FP/D

2

PAK/I

2

PAK/TO-247

FDmesh鈩?II Power MOSFET (with fast diode)

Preliminary Data

Features

Type

STB30NM60ND

STI30NM60ND

STF30NM60ND

STP30NM60ND

STW30NM60ND

V

DSS

600V

R

DS(on)

Max

< 0.13鈩?/div>

I

D

25A

(1)

25A

3

1

2

3

1

2

1

TO-220

D

2

PAK

TO-220FP

1. Limited only by maximum temperature allowed

鈻?/div>

The world鈥檚 best R

DS(on)

*in TO-220 amongst

the fast recovery diode devices

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

Extremely high dv/dt and avalanche

capabilities

Figure 1.

3

12

2

1

3

I

2

PAK

TO-247

Internal schematic diagram

Application

鈻?/div>

Switching applications

Description

The FDmesh鈩?II series belongs to the second

generation of MDmesh鈩?technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company's strip layout

and associates all advantages of reduced on-

resistance and fast switching with an intrinsic fast-

recovery body diode.It is therefore strongly

recommended for bridge topologies, in particular

ZVS phase-shift converters.

Table 1.

Device summary

Order codes

STB30NM60ND

STI30NM60ND

STF30NM60ND

STP30NM60ND

STW30NM60ND

November 2007

Marking

30NM60ND

Rev 1

Package

D虜PAK

I虜PAK

TO-220FP

TO-220

TO-247

Packaging

Tape & reel

Tube

1/15

www.st.com

15

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
FDmesh™
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
600V
電流 - 連續(xù)漏極(Id) @ 25° C
25A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
130 毫歐 @ 12.5A，10V
Id 時的 Vgs(th)（最大）
5V @ 250µA
閘電荷(Qg) @ Vgs
100nC @ 10V
輸入電容 (Ciss) @ Vds
2800pF @ 50V
功率 - 最大
190W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件
其它名稱
497-8448-5

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