鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE A 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION
CONTACT SALES OFFICE
3
1
D
2
PAK
TO-263
(Suffix "T4")
3
1
2
TO-220
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size鈩?" strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
T
stg
T
j
July 1998
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
鹵
20
40
28
160
80
0.53
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
40 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/ C
V/ns
o
o
o
C
C
1/5
(鈥? Pulse width limited by safe operating area
next