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STP2HNC60

STP2HNC60FP

N-CHANNEL 600V - 4鈩?- 2.2A TO-220/TO-220FP

PowerMesh鈩I MOSFET

TYPE

STP2HNC60

STP2HNC60FP

s

V

DSS

600 V

R

DS(on)

<5

鈩?/div>

<5

鈩?/div>

I

D

2.2 A

TYPICAL R

DS

(on) = 4

鈩?/div>

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

TO-220

3

1

2

1

2

3

DESCRIPTION

The PowerMESH

鈩?/div>

II is the evolution of the first

generation of MESH OVERLAY

鈩?

The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

(

q

)

P

TOT

dv/dt

V

ISO

T

stg

T

j

.

Parameter

Drain-source Voltage (V

GS

= 0)

Drain-gate Voltage (R

GS

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

C

= 25擄C

Drain Current (continuos) at T

C

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

C

= 25擄C

Derating Factor

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

--

2.2

1.4

8.8

60

0.48

Value

STP2HNC60

600

鹵 30

2.2(*)

1.4(*)

8.8(*)

30

0.24

3.5

2000

鈥?5 to 150

150

(1)I

SD

鈮?/div>

2.2A, di/dt

鈮?00A/碌s,

V

DD

鈮?/div>

V

(BR)DSS

, T

j

鈮?/div>

T

JMAX

(*)

.

Limited only by maximum temperature allowed

Unit

STP2HNC60FP

V

A

W

W/擄C

V/ns

V

擄C

(鈥?Pulse width limited by safe operating area

May 2001

1/9

型號

版本

描述

廠商

下載
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STP2HNC60FP Datasheet

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