鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
DESCRIPTION
This
MOSFET
series
realized
with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for
Telecom and
Computer
applications. It is also intended for any
applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?/div>
)
P
tot
dv/dt(
1
)
E
AS
(
2
)
T
st g
T
j
April 2000
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
( 2) starting T
j
= 25 C, I
D
=24A , V
DD
= 50V
o
Value
100
100
鹵
20
24
15
96
80
0.53
9
75
-65 to 175
175
o
Unit
V
V
V
A
A
A
W
W /
o
C
V/ns
mJ
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area
(1) I
SD
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