鈻?/div>
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
3
12
DESCRIPTION
The
STx21NM50N
is realized with the second
generation of MDmesh Technology. This revolu-
tionary MOSFET associates a new vertical struc-
ture to the Company's strip layout to yield one of
the world's lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high
efficiency converters
I
2
PAK
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh鈩?II family is very suitable for in-
creasing power density of high voltage converters
allowing system miniaturization and higher effi-
ciencies.
Table 2: Order Codes
SALES TYPE
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
MARKING
B21NM50N
B21NM50N
F21NM50N
P21NM50N
W21NM50N
PACKAGE
D
2
PAK
I
2
PAK
TO-220FP
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
TUBE
TUBE
Rev. 3
October 2005
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