(on) = 0.0026鈩?/div>
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
3
12
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot; strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
D
虜
PAK
TO-263
I
虜
PAK
TO-262
3
1
2
TO-220
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB210NF02
STB210NF02T4
STP210NF02
STB210NF02-1
MARKING
B210NF02
B210NF02
P210NF02
B210NF02
PACKAGE
D
2
PAK
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
V
DGR
V
GS
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
I
D
(**)
Drain Current (continuous) at T
C
= 100擄C
I
D
I
DM
(鈥?
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25擄C
Derating Factor
(1)
Peak Diode Recovery voltage slope
dv/dt
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(鈥?
Pulse width limited by safe operating area.
(**) Current Limited by Package
Value
20
20
鹵 20
120
120
480
300
2.0
1
2.3
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
J
擄C
(1) I
SD
鈮?20A,
di/dt
鈮?50A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 14 V
October 2002
.
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