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STP20NF06 Datasheet

  • STP20NF06

  • N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II PO...

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 60V - 0.06
鈩?/div>
- 20A TO-220/TO-220FP
STripFET鈩?II POWER MOSFET
Table 1: General Features
TYPE
STP20NF06
STF20NF06
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
STP20NF06
STF20NF06
Figure 1:Package
R
DS(on)
< 0.07
鈩?/div>
< 0.07
鈩?/div>
I
D
20 A
20 A(*)
V
DSS
60 V
60 V
TYPICAL R
DS
(on) = 0.06
鈩?/div>
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175
o
C OPERATING TEMPERATURE
HIGH dv/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
1
2
3
TO-220
TO-220FP
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
APPLICATIONS
鈻?/div>
DC MOTOR CONTROL
鈻?/div>
DC-DC & DC-AC CONVERTERS
Figure 2: Internal Schematic Diagram
Table 2:
Order Codes
Part Number
STP20NF06
STF20NF06
MARKING
P20NF06
F20NF06
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
Table 3:
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
to Rth value
Parameter
STP20NF06
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
STF20NF06
60
60
鹵 20
20
14
80
60
0.4
9
120
-55 to 175
20(*)
14(*)
80(*)
28
0.18
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
(*)
Refer to soa for the max allowable current value on FP-type due
December 2004
(1) I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 10A, V
DD
= 30V
Rev.
1
1/10

STP20NF06 產(chǎn)品屬性

  • STP20NF06 View All Specifications

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • STripFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 60V

  • 20A

  • 70 毫歐 @ 10A，10V

  • 4V @ 250µA

  • 18nC @ 10V

  • 400pF @ 25V

  • 60W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • 497-4374-5

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