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STP20NE10 Datasheet

  • STP20NE10

  • N - CHANNEL 100V - 0.07ohm - 20A - TO-220 STripFET MOSFET

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STP20NE10
N - CHANNEL 100V - 0.07鈩?- 20A - TO-220
STripFET鈩?MOSFET
TYPE
ST P20NE10
s
s
s
s
V
DSS
100 V
R
DS(on)
< 0.1
鈩?/div>
I
D
20 A
TYPICAL R
DS(on)
= 0.07
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
2
3
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique 鈥漇ingle Feature Size鈩?鈥?/div>
strip-based process.The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
dv/dt(
1
)
T
stg
T
j
July 1998
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
o
o
Value
100
100
鹵
20
20
14
80
90
0.6
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
20 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/
o
C
V/ ns
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area

STP20NE10 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 100 V

  • +/- 20 V

  • 20 A

  • 0.01 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220

  • 18 ns

  • - 65 C

  • 90 W

  • 37 ns

  • 50

STP20NE10相關(guān)型號(hào)PDF文件下載

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