鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
1
3
2
1
2
3
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique 鈥?Single Feature
Size鈩?鈥?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
STP20NE06
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
V
ISO
dv/dt
T
s tg
T
j
April 1999
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Insulation W ithstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junct ion T emperature
20
14
80
70
0.47
錚?/div>
7
-65 to 175
175
(
1
) I
SD
鈮?/div>
20 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
ST P20NE06F P
60
60
鹵
20
13
9
80
30
0.2
2000
V
V
V
A
A
A
W
W /
o
C
V
V/ns
o
o
C
C
1/9
(鈥? Pulse width limited by safe operating area
STP20NE06LFP相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
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