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STP200NF03 Datasheet

  • STP200NF03

  • N-CHANNEL 30V - 0.0032 ohm - 120A DPAK/IPAK/TO-220 STrip...

  • 14頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 30V - 0.0032
鈩?/div>
- 120A D
虜
PAK/I
虜
PAK/TO-220
STripFET鈩?II POWER MOSFET
TYPE
STB200NF03/-1
STP200NF03
s
s
s
STP200NF03
STB200NF03 STB200NF03-1
AUTOMOTIVE SPECIFIC
V
DSS
30 V
30 V
R
DS(on)
<0.0036
鈩?/div>
<0.0036
鈩?/div>
I
D
120 A
(**)
120 A
(**)
3
1
TYPICAL R
DS
(on) = 0.0032鈩?/div>
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
3
12
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
D
虜
PAK
TO-263
I
虜
PAK
TO-262
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB200NF03T4
STP200NF03
STB200NF03-1
MARKING
B200NF03
P200NF03
B200NF03
PACKAGE
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
V
DGR
V
GS
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
I
D
(**)
Drain Current (continuous) at T
C
= 100擄C
I
D
I
DM
(鈥?
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25擄C
Derating Factor
(1)
Peak Diode Recovery voltage slope
dv/dt
(2)
E
AS
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(鈥?
Pulse width limited by safe operating area.
(**) Current Limited by Package
Value
30
30
鹵 20
120
120
480
300
2.0
1.5
1.45
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
J
擄C
(1) I
SD
鈮?20A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 25 V
October 2002
1/14

STP200NF03 產(chǎn)品屬性

  • STP200NF03 View All Specifications

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • STripFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 30V

  • 120A

  • 3.6 毫歐 @ 60A，10V

  • 4V @ 250µA

  • 140nC @ 10V

  • 4950pF @ 25V

  • 300W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • 497-6738-5STP200NF03-ND

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