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STP190NF04 Datasheet

  • STP190NF04

  • N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET I...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP190NF04
STB190NF04 STB190NF04-1
N-CHANNEL 40V - 3.9 m鈩?- 120A D
2
PAK/I
2
PAK/TO-220
STripFET鈩?II POWER MOSFET
PRELIMINARY DATA
TYPE
STB190NF04/-1
STP190NF04
s
s
s
V
DSS
40 V
40 V
R
DS(on)
<0.0043
鈩?/div>
<0.0043
鈩?/div>
I
D
120 A
120 A
3
1
TYPICAL R
DS
(on) =3.9 m鈩?/div>
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
3
12
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURENT, HIGH SWITCHING SPEED
s
AUTOMOTIVE
D
2
PAK
TO-263
I
2
PAK
TO-262
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(鈥?
I
D
I
DM
(鈥⑩€?
P
tot
dv/dt
(1)
E
AS (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
40
40
鹵 20
120
120
480
310
2.07
7
860
-55 to 175
(鈥⑩€?
Pulse width limited by safe operating area.
1) I
SD
鈮?90A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥? Current limited by package
February
2004
1/9

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