(on) = 0.08鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
1
2
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
Parameter
STP16NF06
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
16
11
64
45
0.3
20
130
--------
-55 to 175
2500
60
60
鹵 20
11(*)
7.5(*)
44(*)
25
0.17
Value
STP16NF06FP
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
V
擄C
Unit
(鈥? Pulse width limited by safe operating area.
(*) Current Limited by package鈥檚 thermal resistance
(1) I
SD
鈮?/div>
16A, di/dt
鈮?/div>
200A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 8A, V
DD
= 30V
April 2002
.
1/9
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