鈩?/div>
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175
o
C OPERATING TEMPERATURE
HIGH dV/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
1
2
3
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
V
ISO
dV/dt
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP16NE06
STP16NE06FP
60
60
鹵
20
16
10
64
60
0.4
錚?/div>
6
-65 to 175
175
(
1
) I
SD
鈮?/div>
16 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
11
7
64
30
0.2
2000
A
A
A
W
o
W/ C
V
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
next
STP16NE06FP相關(guān)型號(hào)PDF文件下載
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