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STP16NB25 Datasheet

  • STP16NB25

  • N - CHANNEL 250V - 0.220ohm - 16A - TO-220/TO-220FP PowerMES...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STP16NB25
STP16NB25FP
N - CHANNEL 250V - 0.220鈩?- 16A - TO-220/TO-220FP
PowerMESH鈩?MOSFET
TYPE
ST P16NB25
ST P16NB25FP
s
s
s
s
s
V
DSS
250 V
250 V
R
DS(on)
< 0.28
鈩?/div>
< 0.28
鈩?/div>
I
D
16 A
8 A
TYPICAL R
DS(on)
= 0.220
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
2
3
1
2
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
V
ISO
T
s tg
T
j
March 1999
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
o
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP16NB25
ST P16NB25F P
250
250
鹵
30
16
10
64
140
1.12
5.5
-----
-65 to 150
150
(
1
) I
SD
鈮?/div>
16A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
8
5
32
45
0.36
5.5
2000
A
A
A
W
W /
o
C
V/ns
V
o
o
C
C
1/9
(鈥? Pulse width limited by safe operating area

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  • 英文版
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