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STP14NF06 Datasheet

  • STP14NF06

  • N-CHANNEL 60V - 0.1ohm - 14A TO-220 STripFET⑩ POWER MOSFET

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP14NF06
N-CHANNEL 60V - 0.1鈩?- 14A TO-220
STripFET鈩?POWER MOSFET
TYPE
STP14NF10
s
s
s
s
V
DSS
60 V
R
DS(on)
< 0.12
鈩?/div>
I
D
14 A
TYPICAL R
DS
(on) = 0.1鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE AT 100 擄C
APPLICATION ORIENTED
CHARACTERIZATION
1
2
3
TO-220
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt (1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
60
60
鹵20
14
10
56
45
0.3
6
50
鈥?5 to 175
175
(1) I
SD
鈮?A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
(2) Starting T
j
= 25擄C, I
D
= 114A, V
DD
= 15V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
擄C
(
q
) Pulse width limited by safe operating area
December 2000
1/8

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