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STP11NM60FP Datasheet

  • STP11NM60FP

  • N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDme...

  • 552.23KB

  • 12頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-CHANNEL 600V - 0.4鈩?11A TO-220/TO-220FP/D
2
PAK/I
2
PAK
MDmesh鈩ower MOSFET
TYPE
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
V
DSS
600 V
600 V
600 V
600 V
R
DS(on)
< 0.45
< 0.45
< 0.45
< 0.45
鈩?/div>
鈩?/div>
鈩?/div>
鈩?/div>
I
D
11 A
11 A
11 A
11 A
1
2
3
1
3
2
TYPICAL R
DS
(on) = 0.4鈩?/div>
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh鈩?is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company鈥檚 PowerMESH鈩?horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company鈥檚 proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition鈥檚 products.
APPLICATIONS
The MDmesh鈩?family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt(1)
V
ISO
T
stg
T
j
May 2003
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
TO-220
TO-220FP
3
1
D
2
PAK
3
12
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
Value
STP(B)11NM60(-1)
600
600
鹵30
11
7
44
160
1.28
15
--
鈥?5 to 150
150
(*)Limited only by maximum temperature allowed
(1)I
SD
<11A, di/dt<400A/碌s, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
Unit
STP11NM60FP
V
V
V
11 (*)
7 (*)
44 (*)
35
0.28
2500
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
1/12
(鈥?Pulse width limited by safe operating area

STP11NM60FP 產(chǎn)品屬性

  • STP11NM60 View All Specifications

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • MDmesh™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 600V

  • 11A

  • 450 毫歐 @ 5.5A，10V

  • 5V @ 250µA

  • 30nC @ 10V

  • 1000pF @ 25V

  • 35W

  • 通孔

  • TO-220-3 整包

  • TO-220FP

  • 管件

  • 497-3181-5

STP11NM60FP相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | ...
    ETC
  • 英文版
    Bi-Directional Triode Thyristor
    ETC
  • 英文版
    Bi-Directional Triode Thyristor
    SEMIWELL
  • 英文版
    Bi-Directional Triode Thyristor
    ETC [ETC]
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) |...
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  • 英文版
    Bi-Directional Triode Thyristor
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 18A I(D) |...
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  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) |...
    ETC
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 500V - 0.55ohm - 10.6A - TO-220/TO-220FP PowerME...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 500V - 0.55ohm - 10.6A - TO-220/TO-220FP PowerME...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 500V - 0.48ohm - 10A - TO-220/TO-220FP PowerMESH...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 500V - 0.48ohm - 10A - TO-220/TO-220FP PowerMESH...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerME...
    STMICROELECTRONICS

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