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STP10NB20FP Datasheet

  • STP10NB20FP

  • N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP10NB20
STP10NB20FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH鈩?MOSFET
TYPE
STP10NB20
STP10NB20F P
s
s
s
s
s
V
DSS
200 V
200 V
R
DS(on)
< 0.40
鈩?/div>
< 0.40
鈩?/div>
I
D
10 A
6 A
TYPICAL R
DS(on)
= 0.3
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
1
2
3
1
2
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
dv/dt(
1
)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage T emperature
Max. O perating Junction T emperature
o
o
o
Value
ST P10NB20
STP10NB20FP
200
200
鹵
30
10
6
40
85
0.68
5.5
2000
-65 to 150
150
(
1
) I
SD
鈮?/div>
10A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
6
4
40
30
0.24
5.5
A
A
A
W
W/ C
V/ns
V
o
o
o
C
C
1/9
(鈥? Pulse width limited by safe operating area
November 1997

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