鈩?/div>
LOW THRESHOLD DRIVE
100% AVALANCHE TESTED
LOGIC LEVEL DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1")
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX 鈥淭4鈥?
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
3
1
2
I
2
PAK
TO-262
(Suffix 鈥?1鈥?
TO-220
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D(1)
I
D(1)
I
DM
(鈥?
P
tot
E
AS(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
鹵 16
100
100
400
300
2
1.9
-55 to 175
(2) Starting T
j
= 25
o
C, I
AR
= 50A, V
DD
= 50V
Unit
V
V
V
A
A
A
W
W/擄C
J
擄C
(鈥?
Pulse width limited by safe operating area
(1) Current Limited by Package
February 2003
.
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