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STP08IE120F4 Datasheet

  • STP08IE120F4

  • Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ...

  • 11頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP08IE120F4
Emitter Switched Bipolar Transistor
ESBT 1200 V - 8 A - 0.10
鈩?/div>
General features
V
CS(ON)
0.8 V
鈻?/div>
I
C
8A
R
CS(ON)
High voltage / high current Cascode
configuration
Low equivalent on resistance
very fast-switch up to 150 kHz
Squared RBSOA up to 1200V
Very low C
iss
driven by R
G
= 47鈩?/div>
Very low turn-off cross over time
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
Applications
鈻?/div>
Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
Order codes
Part Number
STP08IE120F4
Marking
P08IE120F4
Package
TO220FP-4L
Packing
Tube
November 2006
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
W
0.10
Internal schematic diagrams
Rev 1
Preliminary Data
TO220FP-4L
1/11
www.st.com
11

STP08IE120F4 產(chǎn)品屬性

  • STMicroelectronics

  • IGBT 晶體管

  • Tube

  • 50

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