鈥?/div>
strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
DC-DC & DC-AC CONVERTERS
s
DC MOTOR CONTROL (DISK DRIVES, etc.)
s
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
E
AS
(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
30
30
鹵16
6.5
4.5
26
3.3
0.026
200
鈥?5 to 175
(1) Starting T
j
=25擄C, I
D
=6.5A, V
DD
=15V
Unit
V
V
V
A
A
A
W
W/擄C
mJ
擄C
(
q
) Pulse width limited by safe operating area
December 2002
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