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STN4NE03 Datasheet

  • STN4NE03

  • N - CHANNEL 30V - 0.045ohm - 4A - SOT-223 STripFET POWER M...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STN4NE03
N - CHANNEL 30V - 0.045鈩?- 4A - SOT-223
STripFET鈩?POWER MOSFET
TYPE
ST N4NE03
s
s
s
s
s
V
DSS
30 V
R
DS(on)
< 0.06
鈩?/div>
I
D
4 A
TYPICAL R
DS(on)
= 0.045
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
2
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥?Single Feature
Size鈩?鈥?strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL (DISK DRIVES, etc.)
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
s
POWER MANAGEMENT IN
BATTERY-OPERATED AND PORTABLE
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(*)
I
D
(*)
I
DM
(鈥?
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
dv/dt (
1
)
T
stg
T
j
Peak Diode Recovery voltage slope
St orage Temperature
Max. Operating Junction Temperature
(*) Limited by package
o
o
o
1
SOT-223
2
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
鹵
20
4
2.5
16
2.5
0.02
6
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/ C
V/ ns
o
o
o
C
C
(鈥? Pulse width limited by safe operating area
(1)I
SD
鈮?/div>
10A, di/dt
鈮?/div>
300A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
jMAX
August 1998
1/8

STN4NE03相關(guān)型號PDF文件下載

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