鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
2
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC-DC & DC-AC COVERTERS
s
DC MOTOR CONTROL (DISK DRIVERS, etc.)
s
SYNCHRONOUS RECTIFICATION
SOT-223
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(鈥?
I
D
I
DM
(鈥⑩€?
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
60
60
鹵 16
4
2.9
16
3.3
0.026
10
200
-55 to 150
(1) I
SD
鈮?/div>
3A, di/dt
鈮?50A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 4A, V
DD
= 30V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥⑩€?
Pulse width limited by safe operating area.
(鈥?
Current limited by the package
December 2002
.
1/8
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