Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
SOT-223
2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
鈩?/div>
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25 C
Derating Factor
dv/dt(
1
)
T
s tg
T
j
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
o
o
Value
800
800
鹵
30
0.2
0.12
0.8
2.9
0.02
4
-65 to 150
150
(
1
) I
SD
鈮?/div>
0.2 A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(鈥? Pulse width limited by safe operating area
November 1999
STN1NB80 產(chǎn)品屬性
STMicroelectronics
N-Channel
800 V
+/- 30 V
0.2 A
20 Ohms
Single
+ 150 C
SMD/SMT
SOT-223
Reel
16 ns
- 65 C
2.9 W
10 ns
4000
STN1NB80相關(guān)型號PDF文件下載
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型號
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描述
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下載
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STMICROELECTRONICS
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