WT7822AM
Surface Mount N-Channel
Enhancement Mode MOSFET
P b
Lead(Pb)-Free
D
1
3
DRAIN CURRENT
14 AMPERES
DRAIN SOURCE VOLTAGE
25 VOLTAGE
S
S
8
7
D
2
D
6
S
Features:
*Super high dense cell design for low R
DS(ON)
R
DS(ON)
<7 m鈩V
GS
=10V
R
DS(ON)
<9 m鈩V
GS
=4.5V
*Rugged and Reliable
*SO-8 Package
D
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =125 C)
(1)
Pulsed Drain Current
(2)
Drain-Source Diode Forward Current
(1)
Power Dissipation
(1)
Maximax Junction-to-Ambient
(1)
Operating Junction and Storage
Temperature Range
Symbol
V
Spike
4
V
DS
V
GS
I
D
I
DM
I
S
P
D
R
胃JA
T
J
, Tstg
Value
30
25
Unite
V
V
V
A
A
A
W
C/W
C
G
4
5
1
SO-8
+
-16
14
56
14
2.5
50
-55 to 150
Device Marking
WT7822AM=STM7822A
http://www.weitron.com.tw
WEITRON
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02-Aug-05