鈩?/div>
in p-channel version to a low drop
Schottk y diode. Such configuration is extremely
versatile in implementing a large variety of DC-DC
convert ers for printers, portable equipment, and
cellular phones.
New MiniSO-8 package features:
s
INTERNAL SCHEMATIC DIAGRAM
s
Half footprint area versus standard SO-8, for
application where minimum circuit board
space is necessary.
Extremely low profile, ideal for low thickness
equipment.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?/div>
)
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
鈩?/div>
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
o
Valu e
30
30
鹵
20
2
1.3
8
1.25
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
V
RRM
I
F(RMS)
I
F (AV)
I
FSM
dv/dt
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Average F orward Current
Surge Non Repetitive Forward Current
Critical Rate Of Rise Of Reverse Voltage
T
a
=60
o
C
未
=0.5
tp= 10 ms
Sinusoidal
Valu e
40
2
1.2
5.5
10000
Un it
V
A
A
A
V/碌s
(鈥? Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
July 1999
1/6
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