鈩?/div>
(5x5)
DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "STripFET鈩?quot;
technology. The resulting transistor shows extremely low
on-resistance and minimal gate charge. The new
PowerFLAT鈩?package allows a significant reduction in
board space without compromising performance.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH-EFFICIENCY ISOLATED DC-DC
CONVERTERS
s
TELECOM AND AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D(2)
I
D(2)
I
DM(3)
P
tot(2)
P
tot(1)
dv/dt
(5)
E
AS (6)
T
stg
T
j
February 2003
.
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C (Steady State)
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C (Steady State)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
100
100
鹵 20
5.3
3.8
22
4
70
0.03
16
82
-55 to 150
Unit
V
V
V
A
A
A
W
W
W/擄C
V/ns
mJ
擄C
1/8