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STGW50NB60M Datasheet

  • STGW50NB60M

  • N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT

  • 301.59KB

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STGW50NB60M
N-CHANNEL 50A - 600V - TO-247
PowerMESH鈩?IGBT
TYPE
STGW50NB60M
s
s
s
s
V
CES
600 V
V
CE(sat)(25擄C)
< 1.9 V
I
C
50 A
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (V
CESAT
)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
2
1
3
TO-247
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
鈩?/div>
IGBTs, with outstanding performances.
The suffix "M" identifies a family optimized to
achieve very low saturation on voltage for frequency
applications <10 KHz.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
MOTOR CONTROL
s
WELDING EQUIPMENTS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
( )
P
TOT
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T
C
= 25擄C
Collector Current (continuous) at T
C
= 100擄C
Collector Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
600
20
鹵20
100
50
400
250
2
鈥?5 to 150
150
Unit
V
V
V
A
A
A
W
W/擄C
擄C
擄C
(
q
) Pulse width limited by safe operating area
May 2003
1/9

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