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STGP3NB60S Datasheet

  • STGP3NB60S

  • N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STGP3NB60S
STGD3NB60S
N-CHANNEL 3A - 600V - TO-220 / DPAK
PowerMESH鈩?IGBT
TYPE
STGP3NB60S
STGD3NB60S
s
s
s
s
V
CES
600 V
600 V
V
CE(sat)
< 1.5 V
< 1.5 V
I
C
3A
3A
3
1
3
1
2
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (V
cesat
)
OFF LOSSES INCLUDE TAIL CURRENT
ADD SUFFIX 鈥淭4鈥?FOR ORDERING IN TAPE &
REEL (SMD VERSION)
DPAK
TO-220
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
鈩?/div>
IGBTs, with outstanding
performances. The suffix 鈥淪鈥?identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
MOTOR CONTROL
s
LIGHT DIMMER
s
STATIC RELAYS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
( )
P
TOT
T
stg
T
j
Parameter
STGP3NB60S
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T
C
= 25擄C
Collector Current (continuous) at T
C
= 100擄C
Collector Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
65
0.32
鈥?5 to 150
150
600
20
鹵20
6
3
24
45
Value
STGD3NB60S
V
V
V
A
A
A
W
W/擄C
擄C
擄C
Unit
(
q
) Pulse width limited by safe operating area
August 2002
1/10

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