廬
STGP20NB37LZ
N-CHANNEL CLAMPED 20A TO-220
INTERNALLY CLAMPED PowerMESH鈩?IGBT
PRELIMINARY DATA
TYPE
STGP20NB37LZ
s
s
s
s
s
V
CES
CLAMPED
V
CE(s at)
< 2.0 V
I
C
20 A
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
3
1
2
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(鈥?
E
AS
P
tot
E
SD
T
s tg
T
j
April 2000
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
Collector Current (pulsed)
Single Pulse Energy Tc = 25
o
C
T otal Dissipation at T
c
= 25
o
C
Derating Factor
ESD (Human Body Model)
Storage Temperature
Max. O perating Junction Temperature
Value
CLAMPED
20
CLAMPED
40
30
80
700
150
1
4
-65 to 175
175
Un it
V
V
V
A
A
A
mJ
W
W /
o
C
KV
o
o
C
C
1/6
(鈥? Pulse width limited by safe operating area