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廬

STGP20NB37LZ

N-CHANNEL CLAMPED 20A TO-220

INTERNALLY CLAMPED PowerMESH鈩?IGBT

PRELIMINARY DATA

TYPE

STGP20NB37LZ

s

s

s

s

s

V

CES

CLAMPED

V

CE(s at)

< 2.0 V

I

C

20 A

POLYSILICON GATE VOLTAGE DRIVEN

LOW THRESHOLD VOLTAGE

LOW ON-VOLTAGE DROP

HIGH CURRENT CAPABILITY

HIGH VOLTAGE CLAMPING FEATURE

3

1

2

DESCRIPTION

Using the latest high voltage technology based

on patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs with

outstanding performances.

The built in collector-gate zener exhibits a very

precise active clamping while the gate-emitter

zener supplies an ESD protection.

APPLICATIONS

s

AUTOMOTIVE IGNITION

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

V

CES

V

ECR

V

GE

I

C

I

C

I

CM

(鈥?

E

AS

P

tot

E

SD

T

s tg

T

j

April 2000

Parameter

Collector-Emitter Voltage (V

GS

= 0)

Reverse Battery Protection

Gate-Emitter Voltage

Collector Current (continuous) at T

c

= 25

o

C

Collector Current (continuous) at T

c

= 100

o

C

Collector Current (pulsed)

Single Pulse Energy Tc = 25

o

C

T otal Dissipation at T

c

= 25

o

C

Derating Factor

ESD (Human Body Model)

Storage Temperature

Max. O perating Junction Temperature

Value

CLAMPED

20

CLAMPED

40

30

80

700

150

1

4

-65 to 175

175

Un it

V

V

V

A

A

A

mJ

W

W /

o

C

KV

o

o

C

C

1/6

(鈥? Pulse width limited by safe operating area

next

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