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STGP12NB60H Datasheet

  • STGP12NB60H

  • N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STGP12NB60H
N-CHANNEL 12A - 600V TO-220
PowerMESH鈩?IGBT
PRELIMINARY DATA
T YPE
STGP12NB60H
s
V
CES
600 V
V
CE(sat)
< 2.8 V
I
C
12 A
s
s
s
s
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (V
CESAT
)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
1
3
2
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH鈩?/div>
IGBTs,
with
outstanding
perfomances. The suffix 鈥滺鈥?identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
s
UPS
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(鈥?
P
tot
T
s tg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
G ate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100 C
Collector Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Storage T emperature
Max. Operating Junction Temperature
o
Value
600
20
鹵
20
24
12
96
100
0.8
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /
o
C
o
o
C
C
(鈥? Pulse width limited by safe operating area
June 1999
1/8

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