STGP12NB60HD
N-CHANNEL 12A - 600V TO-220
PowerMESH鈩?IGBT
TYPE
STGP12NB60HD
s
s
s
s
s
s
s
s
V
CES
600 V
V
CE(sat)
< 2.8 V
I
C
12 A
HIGH INPUT IMPEDANCE
LOW ON-VOLTAGE DROP (V
cesat
)
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
CO-PACKAGED WITH TURBOSWITCHT
ANTIPARALLEL DIODE
3
1
2
TO-220
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH鈩?IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
s
UPS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
( )
P
TOT
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at T
C
= 25擄C
Collector Current (continuous) at T
C
= 100擄C
Collector Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
600
20
鹵 20
24
12
96
100
0.8
鈥?5 to 150
150
Unit
V
V
V
A
A
A
W
W/擄C
擄C
擄C
( )
Pulse width limited by safe operating area
July 2003
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