STGE200NB60S
N-CHANNEL 150A - 600V - ISOTOP
PowerMESH鈩?IGBT
TYPE
STGE200NB60S
s
s
s
s
s
V
CES
600 V
V
CE(sat)
(typ.)
1.2 V
1.3 V
I
C
150 A
200 A
T
C
100擄C
25擄C
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (V
cesat
)
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
ISOTOP
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
鈩?/div>
IGBTs, with outstanding
performances. The suffix 鈥淪鈥?identifies a family
optimized to achieve very low
V
CE(sat)
(@ max
frequency of 1KHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
LOW FREQUENCY MOTOR CONTROLS
s
ALUMINUM WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C
I
C
I
CM
( )
P
TOT
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Gate-Emitter Voltage
Collector Current (continuous) at T
C
= 25擄C
Collector Current (continuous) at T
C
= 100擄C
Collector Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
600
鹵20
200
150
400
600
4.8
鈥?65 to 150
150
Unit
V
V
A
A
A
W
W/擄C
擄C
擄C
( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA
June 2003
1/9
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