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STGB7NB40LZ Datasheet

  • STGB7NB40LZ

  • N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH⑩...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STGB7NB40LZ
N-CHANNEL CLAMPED 14A - D
2
PAK
INTERNALLY CLAMPED PowerMESH鈩?IGBT
TYPE
STGB7NB40LZ
s
s
s
s
s
s
V
CES
CLAMPED
V
CE(sat)
< 1.50 V
I
C
14 A
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
3
1
D
2
PAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
鈩?/div>
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
R
G
P
TOT
E
CL
E
ECAV
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at 100擄C
Minimum External Gate Resistor
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Collector to Emitter Avalanche Energy
I
C
= 13 A ; T
j
= 150擄C (see fig.1-2)
Reverse Avalanche Energy
I
C
= 7 A ;f= 100 Hz ; T
c
= 25擄C
Storage Temperature
Operating Junction Temperature
Value
CLAMPED
20
CLAMPED
14
500
100
0.66
130
10
Unit
V
V
V
A
鈩?/div>
W
W/擄C
mJ
mJ
鈥?5 to 175
擄C
March 2003
1/8

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