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STGB6NC60H Datasheet

  • STGB6NC60H

  • N-channel 600V - 7A - D2PAK Very fast PowerMESH TM IGBT

  • 327.50KB

  • 14頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STGB6NC60H
N-channel 600V - 7A - D
2
PAK
Very fast PowerMESH鈩?IGBT
General features
Type
STGB6NC60H
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
V
CES
600V
V
CE(sat)
max
@25擄C
<2.5V
I
C
@100擄C
7A
Low on voltage drop (V
cesat
)
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
High frequency operation
3
1
D
虜
PAK
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advaced family of IGBTs, the
PowerMESH鈩?IGBTs, with outstanding
performances. The suffix 鈥淗鈥?identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Internal schematic diagram
Applications
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鈻?/div>
鈻?/div>
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Order codes
Part number
STGB6NC60HT4
Marking
GB6NC60H
Package
D虜PAK
Packaging
Tape & reel
July 2006
Rev 2
1/14
www.st.com
14

STGB6NC60H 產(chǎn)品屬性

  • 表面貼裝

  • 9.35mm

  • D2PAK

  • 10.4 x 9.35 x 4.6mm

  • 3

  • -55 °C

  • ±20V

  • 15 A

  • 600 V

  • +150 °C

  • N

  • 單

  • 10.4mm

  • 4.6mm

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