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STGB3NB60SD Datasheet

  • STGB3NB60SD

  • N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT

  • 8頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STGB3NB60SD
N-CHANNEL 3A - 600V D
2
PAK
Power MESH鈩?IGBT
TYPE
STGB3NB60SD
s
V
CES
600 V
V
CE(sat)
<1.5 V
I
c
3A
s
s
s
s
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (V
cesat
)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
INTEGRATED FREEWHEELING DIODE
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4鈥?
3
1
D
2
PAK
TO-263
(suffix鈥淭4鈥?
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed
an advanced family of IGBTs, the PowerMESH鈩?IGBTs,
with outstanding perfomances. The suffix 鈥淪鈥?identifies a
family optimized to achieve minimum on-voltage drop for
low frequency applications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
GAS DISCHARGE LAMP
s
STATIC RELAYS
s
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C
I
C
I
CM
(鈥?
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Gate-Emitter Voltage
Collector Current (continuos) at T
c
=25擄C
Collector Current (continuos)at T
c
=100擄C
Collector Current (pulsed)
Total Dissipation at T
c
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
600
鹵 20
6
3
25
70
0.46
鈥?0 to 175
175
Unit
V
V
A
A
A
W
W/擄C
擄C
擄C
(
鈥?/div>
)Pulse width limited by safe operating area.
November 2000
1/8

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