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STGB3NB60HD Datasheet

  • STGB3NB60HD

  • N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT

  • 94.25KB

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STGB3NB60HD
N-CHANNEL 3A - 600V TO-263
PowerMESH鈩?IGBT
T YPE
STGB3NB60HD
s
V
CES
600 V
V
CE(sat)
< 2.8 V
I
C
3 A
s
s
s
s
s
s
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (V
cesat
)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
CO-PACKAGED WITH TURBOSWITCH鈩?/div>
ANTIPARALLEL DIODE
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥漈4鈥?
3
1
D
2
PAK
TO-263
(Suffix 鈥漈4鈥?
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH鈩?/div>
IGBTs,
with
outstanding
perfomances. The suffix 鈥滺鈥?identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CES
V
GE
I
C
I
C
I
CM
(鈥?
P
tot
T
s tg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
G ate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
Collector Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Storage T emperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
600
鹵
20
6
3
24
70
0.56
-65 to 150
150
Un it
V
V
A
A
A
W
W /
o
C
o
o
C
C
(鈥? Pulse width limited by max. junction temperature
June 1999
1/8

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