廬
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D
2
PAK
INTERNALLY CLAMPED PowerMESH鈩?IGBT
TYPE
STGB10NB37LZ
s
s
s
s
s
s
V
CES
CLAMPED
V
CE(s at)
< 1.8 V
I
C
10 A
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX 鈥漈4鈥?
3
1
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
D
2
PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(鈥?
P
tot
E
SD
T
s tg
T
j
June 1999
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
G ate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100 C
Collector Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
ESD (Human Body Model)
Storage T emperature
Max. Operating Junction Temperature
o
Value
CLAMPED
18
CLAMPED
20
20
60
125
0.83
4
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /
o
C
KV
o
o
C
C
1/8
(鈥? Pulse width limited by safe operating area