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STGB10NB37LZ_01 Datasheet

  • STGB10NB37LZ_01

  • N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh T...

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STGB10NB37LZ
N-CHANNEL CLAMPED 20A - D2PAK
INTERNALLY CLAMPED PowerMesh鈩?IGBT
TYPE
STGB10NB37LZ
s
s
s
s
s
s
V
CES
CLAMPED
V
CE(sat)
< 1.8 V
I
C
20 A
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
3
1
D2PAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
鈩?/div>
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
CM
P
TOT
E
SD
T
stg
T
j
June 2001
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuos) at T
C
= 100擄C
Collector Current (pulse width < 100碌s)
Total Dissipation at T
C
= 25擄C
Derating Factor
ESD (Human Body Model)
Storage Temperature
Max. Operating Junction Temperature
Value
CLAMPED
18
CLAMPED
20
60
125
0.83
4
鈥?5 to 175
175
Unit
V
V
V
A
A
W
W/擄C
KV
擄C
擄C
1/10

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