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STG3P3M25N60 Datasheet

  • STG3P3M25N60

  • 3 Phase inverter IGBT - SEMITOP㈢3 module

  • 12頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STG3P3M25N60
3 Phase inverter
IGBT - SEMITOP
廬
3 module
PRELIMINARY DATA
General features
Type
V
CES
600V
V
CE(sat)
(Max)
@ I
C
=7A,
I
C
@80擄C
Ts=25擄C
STG3P3M25N60
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
< 2.5V
25A
N-channel very fast PowerMESH鈩?IGBT
Lower on-voltage drop (V
cesat
)
Lower C
RES
/ C
IES
ratio (no cross-conduction
susceptbility)
Very soft ultra fast recovery antiparallel diode
High frequency operation up to 70 KHz
New generation products with tighter
parameter distribution
One screw mounting
Compact design
Semitop
廬
3 is a trademark of Semikron
SEMITOP廬3
Internal schematic diagram
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH鈩?IGBT, with outstanding
performances.
Applications
鈻?/div>
鈻?/div>
High frequency inverters
Motor drivers
Order codes
Sales Type
STG3P3M25N60
Marking
G3P3M25N60
Package
SEMITOP廬3
Packaging
SEMIBOX
May 2006
Rev1
1/12
www.st.com
12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

STG3P3M25N60 產(chǎn)品屬性

  • STMicroelectronics

  • IGBT 晶體管

  • Hex

  • 600 V

  • +/- 20 V

  • 50 A

  • + 150 C

  • SEMITOP 3-19

  • Bulk

  • - 40 C

  • SMD/SMT

  • 10

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