鈻?/div>
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF and TO-220FH plastic
packages
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Creepage distance path is > 4 mm for
TO-220FH
Figure 1.
TO-3PF
3
1
2
1
2
3
TO-220FH
Internal schematic diagram.
Application
鈻?/div>
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY鈩?process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company鈥檚 proprietary edge termination structure,
gives the lowest R
DS(on)
per area, unrivalled gate
charge and switching characteristics.
Table 1.
Device summary
Order codes
STFV4N150
STFW4N150
STP4N150
STW4N150
April 2008
Marking
4N150
4N150
P4N150
W4N150
Rev 6
Package
TO-220FH
TO-3PF
TO-220
TO-247
Packaging
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